INFINEON BFR740L3RHE6327XTSA1 Bipolar - RF Transistor, NPN, 4 V, 47 GHz, 160 mW, 40 mA, 160 hFE Vello VE-1006 4 lb and has a

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INFINEON BFR740L3RHE6327XTSA1 Bipolar - RF Transistor, NPN, 4 V, 47 GHz, 160 mW, 40 mA, 160 hFE Vello VE-1006 4 lb and has aThe BFR 740L3RH E6327 is a NPN wideband RF Transistor based on Infineon's reliable high volume silicon germanium carbon hetero junction bipolar technology. It provides a transition frequency fT of 42GHz and is suited for low voltage applications from VHF to 12GHz. Due to its low power consumption the device is very energy efficient and well suited for mobile applications. It is housed in a very thin small leadless package ideal for modules. Very low